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吴继宝

发布日期:2024-10-17    点击次数:

一、个人简介:

吴继宝,199111月出生于浙江丽水,西安电子科技大学 微电子学与固体电子学专业工学博士。

二、研究领域:

主要从事新型半导体材料和器件设计等方面研究

三、主讲课程:

《半导体物理》、《数字集成电路设计原理》等

四、主要研究成果

[1] Jibao Wu. Coverage-dependent Adsorption and Stability of Functionalized Ge(100) and (111) Surfaces[J]. Applied Surface Science, 2022, 572: 151466.

[2] Jibao Wu. Effects of strain on the electronic, optical, and ferroelectric transition properties of HfO2: ab initio simulation study[J]. Journal of Physics: Condensed Matter, 2021, 33(29): 295501.

[3] Jibao Wu et al. Impact of Oxygen Vacancies on Monoclinic Hafnium Oxide and Band Alignment with Semiconductors[J]. Materials Today Communications, 2020 25: 101482.

[4] Jibao Wu et al. Nonideality of Negative Capacitance Ge Field-Effect Transistors without Internal Metal Gate[J]. IEEE Electron Device Letters, 2018, 39(4): 614-617

[5] Jiuren Zhou, Jibao Wu, et al. Frequency Dependence of Performance in Ge Negative Capacitance PFETs Achieving Sub-30 mV/decade Swing and 110 mV Hysteresis at MHz[C]. IEEE International Electron Devices Meeting(IEDM), San Francisco, CA, USA, Dec. 2017, pp.373-376.(共同一作)

[6] Chengxu Wang, Jibao Wu et al. Effects of Temperature on the Performance of Hf0.5Zr0.5O2-based Negative Capacitance FETs[J]. IEEE Electron Device Letters, 2020, 41(11): 1625-1628.

[7] Yibo Wang, Jibao Wu et al. Interface Tuning of metal/β-Ga2O3 Schottky barrier diode by Post Thermal Annealing[C]. 2018 International Conference on Solid State Devices and Materials (SSDM2018), Hongo Campus, The University of Tokyo, September 9 - 13, 2018. (共同一作)

[8] Cizhe Fang; Yan Liu; Yibo Wang; Jibao Wu; Genquan Han; Yao Shao, et al. "Buffer-free GeSn with high relaxation degree grown on Si (001) substrate for photodetection." IEEE Photonics Journal 10.6 (2018): 1-9.

五、荣誉获奖

2024年度,yl6809永利官网优秀教师

六、指导学生

第八届全国大学生集成电路创新创业大赛 华东分赛区决赛一等奖,2024年,指导老师;

第八届全国大学生集成电路创新创业大赛 全国总决赛二等奖,2024年,指导老师;


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